Annealing Studies of Nanoporous Si Thin Films Fabricated by Dry Etch

8, 9 temperature annealing, which indicates limited applications of these materials for power generation involving high temperatures. In this work, the possible shape change of nanoporous Si thin films is systematically studied for different annealing conditions. As a 20-μm-long bridge with nanopores, the studied Si thin films are patterned by electron beam lithography and then drilled with deep reactive ion etching (DRIE). It is found that the existence of a SiO /Si 2