用脉冲激光沉积技术制备含铅钙钛矿薄膜的生长行为

Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1994-08-07 DOI:10.1109/ISAF.1994.522411

I. Lin, Kuo-Shung Liu, S. Tu, Sheng‐Jenn Yang

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引用次数: 0

摘要

在SrTiO/ sub3 /-缓冲硅衬底上成功地生长出了高度织构(110)取向的PLZT薄膜。假设脉冲激光沉积的薄膜是通过两步过程形成的，即团簇粘附和相变。使用STO作为缓冲层的有益效果包括增强非晶到钙钛矿相变的动力学。从而抑制了薄膜中pb物种的损失。在550/spl度/C(1毫巴Po/sub 2/)下沉积和在550/spl度/C(1毫巴Po/sub 2/)下退火的PLZT/STO/Si薄膜的最佳介电常数约为/sub /spl epsi/r/=490。在50kv /cm场强下，相应的电荷存储密度约为Q/sub /c/ /spl ap/1.5 /spl mu/c/cm/sup 2/。

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The growth behavior of Pb-containing perovskite thin films using pulsed laser deposition technique

The PLZT films highly textured in (110) orientation have been successfully grown on SrTiO/sub 3/-buffered silicon substrates. The films deposited by pulsed laser deposition are assumed to be formed via a two-step process, i.e., cluster adherence and phase transformation. The beneficial effect of using STO as buffer layers involves enhancing the kinetics of the amorphous to perovskite phase transformation. Thereby, the loss of Pb-species in the films is thus suppressed. The optimum dielectric constants obtained are around /sub /spl epsi/r/=490 for PLZT/STO/Si films deposited at 550/spl deg/C (1 mbar Po/sub 2/) and post-annealed at 550/spl deg/C (1 atm Po/sub 2/). Furthermore, the corresponding charge storage density is around Q/sub c//spl ap/1.5 /spl mu/c/cm/sup 2/, at 50 KV/cm applied field strength.

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Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics

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