间歇沉积法生长非晶硅的表面反应研究

Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI:10.1109/PVSC.1988.105669

T. Ishimura, Y. Okayasu, H. Yamamoto, K. Fukui

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引用次数: 0

摘要

采用短时间间隔交换两种气体的间歇沉积法，研究了太阳能电池发光放电等离子体生长中a-Si:H的表面反应;一种用于生长硅膜，另一种用于修饰生长表面。发现氟消除过程活化能为7 meV，生长表面以下8 A区域的氟在250℃下被氢自由基去除。该方法制备的Si:H在AM1 100-mW/cm/sup 2/光下具有4*10/sup -4/ (Omega -cm)/sup -1/的高光导率和10/sup 6/的高光敏性。与传统的a-Si: h >相比，该薄膜的光降解效果更小。

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A study on the surface reaction in the growth of amorphous silicon by intermittent deposition method

The surface reaction in the glow discharge plasma growth of a-Si:H for solar cells was studied by the intermittent deposition method in which two kinds of gases are exchanged at short intervals; one is used for growing silicon film: the other for modifying the growing surface. It was found that the fluorine elimination process has an activation energy of 7 meV and that fluorine in the region of 8 A below the growing surface is removed by hydrogen radicals at 250 degrees C. The Si:H prepared by this method has a high photoconductivity of 4*10/sup -4/ ( Omega -cm)/sup -1/ under AM1 100-mW/cm/sup 2/ light and a high photosensitivity of 10/sup 6/. This film shows smaller photodegradation than conventional a-Si:H.<>

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来源期刊

Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference

CiteScore

1.40

自引率

0.00%

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