G. Saranya, M. SivamangaiN., B. Priya, R. BenazirBegam
{"title":"大功率多量子阱InGaN/GaN发光二极管的设计与仿真","authors":"G. Saranya, M. SivamangaiN., B. Priya, R. BenazirBegam","doi":"10.1109/ICDCS48716.2020.243560","DOIUrl":null,"url":null,"abstract":"The electrical and optical characteristics of InGaN/GaN based light emitting diodes (LEDs) having V-shaped, trapezoidal and U-shaped quantum well is simulated using TCAD Silvaco software. Comparison of different well shape is studied and simulation results shows that the device with V-shaped quantum well has superior performance in terms of Internal Quantum Efficiency of 80% and optical power of 120 mW for a maximum current of 200 mA when compared with U-shaped and trapezoidal well.","PeriodicalId":6300,"journal":{"name":"2012 IEEE 32nd International Conference on Distributed Computing Systems","volume":"18 1","pages":"109-112"},"PeriodicalIF":0.0000,"publicationDate":"2020-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and Simulation of Multiple Quantum well based InGaN/GaN Light Emitting Diode for High power applications\",\"authors\":\"G. Saranya, M. SivamangaiN., B. Priya, R. BenazirBegam\",\"doi\":\"10.1109/ICDCS48716.2020.243560\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrical and optical characteristics of InGaN/GaN based light emitting diodes (LEDs) having V-shaped, trapezoidal and U-shaped quantum well is simulated using TCAD Silvaco software. Comparison of different well shape is studied and simulation results shows that the device with V-shaped quantum well has superior performance in terms of Internal Quantum Efficiency of 80% and optical power of 120 mW for a maximum current of 200 mA when compared with U-shaped and trapezoidal well.\",\"PeriodicalId\":6300,\"journal\":{\"name\":\"2012 IEEE 32nd International Conference on Distributed Computing Systems\",\"volume\":\"18 1\",\"pages\":\"109-112\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-03-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 32nd International Conference on Distributed Computing Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICDCS48716.2020.243560\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 32nd International Conference on Distributed Computing Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICDCS48716.2020.243560","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and Simulation of Multiple Quantum well based InGaN/GaN Light Emitting Diode for High power applications
The electrical and optical characteristics of InGaN/GaN based light emitting diodes (LEDs) having V-shaped, trapezoidal and U-shaped quantum well is simulated using TCAD Silvaco software. Comparison of different well shape is studied and simulation results shows that the device with V-shaped quantum well has superior performance in terms of Internal Quantum Efficiency of 80% and optical power of 120 mW for a maximum current of 200 mA when compared with U-shaped and trapezoidal well.
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