{"title":"太阳能电池用化学生长CdS和CdTe薄膜的电学特性","authors":"Mani Tsoho, A. B. Ahmed, A. Musa, Mansur Said","doi":"10.9734/ajr2p/2022/v6i4123","DOIUrl":null,"url":null,"abstract":"Thin films of Cadmium Sulphide (CdS) and Cadmium Telluride (CdTe) have gained a great deal of interest due to their potential applications in solar cells. Deposition of CdS and CdTe thin films were performed on Soda Lime glass and FTO substrate at 400℃ and 300℃ respectively using spray pyrolysis technique. The Hall Effect property was measured for the deposited CdS and CdTe films. These results shows the resistivity and mobility of CdS films deposited at 400℃ were 1.588×104 Ωcm and 5.619×102 cm2/Vs, respectively, The annealed CdTe thin film had a resistivity value of 1.016×104 Ωcm, while the annealed and etched CdTe thin film had a resistivity value of 4.52×104 Ωcm, The resultant films are observed to be good to make a solar cell with CdS as a window layer and CdTe as absorber layer.","PeriodicalId":8529,"journal":{"name":"Asian Journal of Research and Reviews in Physics","volume":"21 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical Characterization of Chemically Grown CdS and CdTe Thin Films for Solar Cell Application\",\"authors\":\"Mani Tsoho, A. B. Ahmed, A. Musa, Mansur Said\",\"doi\":\"10.9734/ajr2p/2022/v6i4123\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thin films of Cadmium Sulphide (CdS) and Cadmium Telluride (CdTe) have gained a great deal of interest due to their potential applications in solar cells. Deposition of CdS and CdTe thin films were performed on Soda Lime glass and FTO substrate at 400℃ and 300℃ respectively using spray pyrolysis technique. The Hall Effect property was measured for the deposited CdS and CdTe films. These results shows the resistivity and mobility of CdS films deposited at 400℃ were 1.588×104 Ωcm and 5.619×102 cm2/Vs, respectively, The annealed CdTe thin film had a resistivity value of 1.016×104 Ωcm, while the annealed and etched CdTe thin film had a resistivity value of 4.52×104 Ωcm, The resultant films are observed to be good to make a solar cell with CdS as a window layer and CdTe as absorber layer.\",\"PeriodicalId\":8529,\"journal\":{\"name\":\"Asian Journal of Research and Reviews in Physics\",\"volume\":\"21 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Asian Journal of Research and Reviews in Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.9734/ajr2p/2022/v6i4123\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Asian Journal of Research and Reviews in Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.9734/ajr2p/2022/v6i4123","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical Characterization of Chemically Grown CdS and CdTe Thin Films for Solar Cell Application
Thin films of Cadmium Sulphide (CdS) and Cadmium Telluride (CdTe) have gained a great deal of interest due to their potential applications in solar cells. Deposition of CdS and CdTe thin films were performed on Soda Lime glass and FTO substrate at 400℃ and 300℃ respectively using spray pyrolysis technique. The Hall Effect property was measured for the deposited CdS and CdTe films. These results shows the resistivity and mobility of CdS films deposited at 400℃ were 1.588×104 Ωcm and 5.619×102 cm2/Vs, respectively, The annealed CdTe thin film had a resistivity value of 1.016×104 Ωcm, while the annealed and etched CdTe thin film had a resistivity value of 4.52×104 Ωcm, The resultant films are observed to be good to make a solar cell with CdS as a window layer and CdTe as absorber layer.