{"title":"反应直流磁控溅射制备纳米结构氮化硅薄膜气体传感器","authors":"F. J. Kadhim, A. Anber","doi":"10.1177/2397791417731025","DOIUrl":null,"url":null,"abstract":"In this work, high-quality nanostructured silicon nitride films were prepared by reactive direct current magnetron sputtering technique. The properties of the prepared structures were determined by the ratios of gases (argon and nitrogen) in the discharge gas mixture. This parameter was effectively seen important to control the structural characteristics of the prepared nanostructures, especially surface roughness and particle size. The prepared nanostructures were successfully tested for gas-sensing applications and they exhibited reasonably high sensitivity for their resistance changes to gas concentration with increasing temperature (up to 96% at 350 °C). This work can be good attempt to use silicon nitride nanostructures in such important application.","PeriodicalId":44789,"journal":{"name":"Proceedings of the Institution of Mechanical Engineers Part N-Journal of Nanomaterials Nanoengineering and Nanosystems","volume":null,"pages":null},"PeriodicalIF":4.2000,"publicationDate":"2017-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Fabrication of nanostructured silicon nitride thin film gas sensors by reactive direct current magnetron sputtering\",\"authors\":\"F. J. Kadhim, A. Anber\",\"doi\":\"10.1177/2397791417731025\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, high-quality nanostructured silicon nitride films were prepared by reactive direct current magnetron sputtering technique. The properties of the prepared structures were determined by the ratios of gases (argon and nitrogen) in the discharge gas mixture. This parameter was effectively seen important to control the structural characteristics of the prepared nanostructures, especially surface roughness and particle size. The prepared nanostructures were successfully tested for gas-sensing applications and they exhibited reasonably high sensitivity for their resistance changes to gas concentration with increasing temperature (up to 96% at 350 °C). This work can be good attempt to use silicon nitride nanostructures in such important application.\",\"PeriodicalId\":44789,\"journal\":{\"name\":\"Proceedings of the Institution of Mechanical Engineers Part N-Journal of Nanomaterials Nanoengineering and Nanosystems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.2000,\"publicationDate\":\"2017-09-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Institution of Mechanical Engineers Part N-Journal of Nanomaterials Nanoengineering and Nanosystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1177/2397791417731025\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"NANOSCIENCE & NANOTECHNOLOGY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Institution of Mechanical Engineers Part N-Journal of Nanomaterials Nanoengineering and Nanosystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1177/2397791417731025","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"NANOSCIENCE & NANOTECHNOLOGY","Score":null,"Total":0}
Fabrication of nanostructured silicon nitride thin film gas sensors by reactive direct current magnetron sputtering
In this work, high-quality nanostructured silicon nitride films were prepared by reactive direct current magnetron sputtering technique. The properties of the prepared structures were determined by the ratios of gases (argon and nitrogen) in the discharge gas mixture. This parameter was effectively seen important to control the structural characteristics of the prepared nanostructures, especially surface roughness and particle size. The prepared nanostructures were successfully tested for gas-sensing applications and they exhibited reasonably high sensitivity for their resistance changes to gas concentration with increasing temperature (up to 96% at 350 °C). This work can be good attempt to use silicon nitride nanostructures in such important application.
期刊介绍:
Proceedings of the Institution of Mechanical Engineers Part N-Journal of Nanomaterials Nanoengineering and Nanosystems is a peer-reviewed scientific journal published since 2004 by SAGE Publications on behalf of the Institution of Mechanical Engineers. The journal focuses on research in the field of nanoengineering, nanoscience and nanotechnology and aims to publish high quality academic papers in this field. In addition, the journal is indexed in several reputable academic databases and abstracting services, including Scopus, Compendex, and CSA's Advanced Polymers Abstracts, Composites Industry Abstracts, and Earthquake Engineering Abstracts.