低介电材料HOSP(R)与硅氧烷氢的比较研究

ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI:10.1109/ICVC.1999.820882

Sunyoung Kim, Sungwoong Chung, Joo-Han Shin, N. Park, J. K. Kim, J. Park

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引用次数: 0

摘要

评估低k候选SOG材料HOSP(R)并与HSQ进行比较。利用FTIR、TDS、示波器和应力计研究了薄膜的化学性质和不同处理步骤对薄膜的影响。各种蚀刻后处理的吸水率是影响薄膜介电性能的关键因素。与HSQ膜相比，HOSP(R)是一种k值较低的介电介质，但更容易吸收水分。

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HOSP(R) as a low dielectric material: comparative study against hydrogen silsesquioxane

Low-k candidate SOG material HOSP(R) is evaluated and compared to HSQ. Particularly, the chemical nature of the film and the effects of various processing steps were investigated using FTIR, TDS, oscilloscope and stress gauge. The water absorption upon various post etch treatments turned out to be a crucial factor affecting the dielectric properties of the film. HOSP(R) proved to be a dielectric with lower k value compared to the HSQ film but was more vulnerable to moisture uptake.

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ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)

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