井内CD控制及垂直剖面BARC刻蚀技术开发及相关理论研究

2020 China Semiconductor Technology International Conference (CSTIC) Pub Date : 2020-06-26 DOI:10.1109/CSTIC49141.2020.9282531

Jiang Linpeng, Zhuma YiZheng, Lu Lian, Li Quanbo, Huang Jun, Zhang Yu

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引用次数: 0

摘要

BARC作为一种成本较低的结构材料在集成电路制造中得到了广泛的应用。对于I4nm技术节点，用于确定离子注入面积。然而，由于BRAC材料的柔软性，理想的BRAC型材很难实现。这严重制约了它的应用。在我们的研究中，通过在ICP蚀刻机上进行各种BARC剖面学习获得了理想的BARC垂直剖面，并用扫描电镜对其物理结构进行了评价。此外，还分析了自由基和离子处理对BARC蚀刻的影响，并提出了相关的轮廓形成机理。结果诱导的PR剖面在BARC剖面发育中起着重要作用。

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Well CD Control and Vertical Profile BARC Etch Development and Related Theory Research

The BARC as a lower cost structure material is widely used in IC manufacture. For I4nm technology node, it is used to determined ion implantation area. However, the ideal BRAC profile is hard to achieve since its soft material characteristic. This deeply restricts its application. In our study, the idealized vertical BARC profile is obtained by variety of BARC profile learning on ICP etcher, with the physical structure evaluated by SEM. In addition, the analysis of radicals and ions processing on the BARC etching and related profile shaped mechanism is proposed. The result induced PR profile plays very important roles in BARC profile develop.

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2020 China Semiconductor Technology International Conference (CSTIC)

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