采用不同集电极半导体的改进石墨烯基异质结晶体管用于高频应用

Advanced Materials Letters Pub Date : 2022-03-01 DOI:10.5185/amlett.2022.011688

C. Strobel, C. Chavarin, S. Leszczynski, K. Richter, M. Knaut, J. Reif, Sandra Voelkel, M. Albert, C. Wenger, J. Bartha, T. Mikolajick

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引用次数: 2

摘要

石墨烯基异质结晶体管(GBHT)是达到太赫兹工作频率的极具吸引力的器件概念。这种新型晶体管由两个氮掺杂硅层和一个石墨烯单层组成。在这里，我们展示了晶体管输出特性中电流饱和的器件性能改进。可以观察到石墨烯基极电压对集电极电流的明显调制。

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Improved graphene-base heterojunction transistor with different collector semiconductors for high-frequency applications

The graphene-base heterojunction transistor GBHT is an attractive device concept to reach THz operation frequencies. The novel transistor consists of two n-doped silicon layers with a graphene monolayer in between. Here we demonstrate improved device performance with current saturation in the transistor’s output characteristics. A clear modulation of the collector current by the applied graphene base voltage can be observed.

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Advanced Materials Letters

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