带隙工程对功率SiGe异质结双极晶体管IC-VBE反激特性的影响

2011 IEEE International Conference of Electron Devices and Solid-State Circuits Pub Date : 2011-12-29 DOI:10.1109/EDSSC.2011.6117589

Chen Liang, Zhang Wan-rong, Jin Dong-yue, Ding Chun-bao, Zhang Yu-jie, Lu Zhi-yi

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引用次数: 0

摘要

通过理论分析、计算机仿真和实验测量，研究了带隙工程对功率SiGe异质结双极晶体管IC-VBE反激特性的影响。研究发现，由于锗成分的存在，在相同的工作条件下，SiGe异质结双极晶体管比同质结双极晶体管具有更好的热稳定性，这有利于降低HBT的发射极镇流器电阻，提高晶体管的性能。Ge含量越大，HBT越稳定。

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The effect of bandgap engineering on IC-VBE fly-back characteristic of power SiGe heterojunction bipolar transistor

The effect of bandgap engineering on IC-VBE flyback characteristic of power SiGe heterojunction bipolar transistor is studied through theoretical analysis, computer simulations, and experimental measurements. It is found that because of the existence of Ge composition, SiGe Heterojunction Bipolar Transistors have better thermal stability compared with homojunction bipolar transistors under the same operating condition which will be beneficial to decrease the emitter ballast resistance of HBT and improve the performance of transistor. And the greater Ge composition is, the more stable the HBT is.

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2011 IEEE International Conference of Electron Devices and Solid-State Circuits

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