质子和电子辐照n/sup +/p InP MOCVD台面二极管(太阳能电池)的DLTS研究

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147318

R. Walters, S. Messenger, G. Summers

{"title":"质子和电子辐照n/sup +/p InP MOCVD台面二极管(太阳能电池)的DLTS研究","authors":"R. Walters, S. Messenger, G. Summers","doi":"10.1109/ICIPRM.1991.147318","DOIUrl":null,"url":null,"abstract":"A study of proton irradiated InP junctions is described. Results are presented that show that the deep level transient spectroscopy (DLTS) spectra produced by 1 MeV electrons and 3 MeV protons in InP mesa diodes made using metalorganic chemical vapor deposition (MOCVD) are essentially the same. The results also show that there are some differences in the annealing behavior of the defects, especially following minority carrier injection at low temperatures.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"DLTS study of proton and electron irradiated n/sup +/p InP MOCVD mesa diodes (solar cells)\",\"authors\":\"R. Walters, S. Messenger, G. Summers\",\"doi\":\"10.1109/ICIPRM.1991.147318\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A study of proton irradiated InP junctions is described. Results are presented that show that the deep level transient spectroscopy (DLTS) spectra produced by 1 MeV electrons and 3 MeV protons in InP mesa diodes made using metalorganic chemical vapor deposition (MOCVD) are essentially the same. The results also show that there are some differences in the annealing behavior of the defects, especially following minority carrier injection at low temperatures.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147318\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147318","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

描述了质子辐照在p结中的研究。结果表明，在金属有机化学气相沉积(MOCVD)法制备的InP台面二极管中，1 MeV电子和3 MeV质子产生的深能级瞬态光谱(DLTS)基本相同。结果还表明，在低温注入少量载流子后，缺陷的退火行为也有所不同

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DLTS study of proton and electron irradiated n/sup +/p InP MOCVD mesa diodes (solar cells)

A study of proton irradiated InP junctions is described. Results are presented that show that the deep level transient spectroscopy (DLTS) spectra produced by 1 MeV electrons and 3 MeV protons in InP mesa diodes made using metalorganic chemical vapor deposition (MOCVD) are essentially the same. The results also show that there are some differences in the annealing behavior of the defects, especially following minority carrier injection at low temperatures.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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