LaNi5中氢致缺陷的恢复和残余氢的热解吸:陶瓷中的晶界、界面、缺陷和局域量子结构专刊

K. Sakaki, H. Araki, Y. Shirai
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引用次数: 20

摘要

采用正电子寿命谱法和氢热脱附法研究了lani5中初始氢化引起的晶格缺陷及其对残余氢含量的影响。正电子寿命谱的成分分析表明,初始氢化产生了数量惊人的空位和位错。室温下,在423 ~ 673 K范围内,LaNi 5的空位迁移现象较为明显,而LaNi 5的位错更为稳定。氢热解吸测量表明,残余氢的释放主要发生在450 ~ 650 K温度范围内,在800 K左右停止。残余氢的释放温度与lani5中空位迁移和湮灭的温度密切相关。lani5中残留的氢很可能被氢化引起的空位和空位团簇所捕获。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Recovery of hydrogen induced defects and thermal desorption of residual hydrogen in LaNi5 : Special issue on grain boundaries, interfaces, defects and localized quantum structures in ceramics
Lattice defects induced by initial hydriding and their effect on residual hydrogen content in LaNi 5 have been studied by means of positron lifetime spectroscopy and hydrogen thermal desorption measurement. Component analyses of positron lifetime spectra show that surprising amount of vacancies together with dislocations are generated by the initial hydriding. Vacancy migration in LaNi 5 after hydrogen desorption at room temperature is observed around 423-673 K, while dislocations in LaNi 5 are much more stable. Hydrogen thermal desorption measurement shows that the release of residual hydrogen occurs mainly in the temperature range from 450 to 650 K, and it ceases at about 800 K. The release temperature of residual hydrogen closely corresponds with the temperature of vacancy migration and annihilation in LaNi 5 . Residual hydrogen in LaNi 5 is most likely trapped by vacancies and vacancy clusters, which are induced by hydriding.
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