On the application potential of chemically tailored metal oxide and higher chalcogenide nanoparticles for nanoscale resistive switching devices

Resistive switching for non‐volatile data storage is a highly relevant field of research. Up to now, resistive switching devices are fabricated via semiconductor processing technologies. This poses the question, of whether integration of chemically tailored nanoparticles, either consisting of valence change or phase change materials, can be integrated in nanoelectrode configurations in order to explore their functionality for resistive switching applications. This Review will discuss the resistive switching properties of such nanoparticles by means of selected examples of both, nanoparticle assemblies as well as on the individual particle level. Although this field of research is rather unexplored, it will become evident that chemically tailored nanoparticles bear great potential for resistive switching applications.This article is protected by copyright. All rights reserved.