铋- ii中的电偶热磁现象及优值图,实验数据综述及器件参数计算

T.C. Harman, J.M. Honig, Lorella Jones
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引用次数: 10

摘要

在之前的一篇论文[1]中,纯铋的输运理论被用来预测在各种有效质量、弛豫时间和相对于伪对称轴的迁移率下的各种输运系数的数值。推导了各种极限情况下的各向异性参数值和各向异性参数的表达式。数值预测再次与直接实验测量结果基本一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Galvano-thermomagnetic phenomena and the figure of merit in bismuth—II survey of experimental data and calculation of device parameters

Transport theory, developed in a preceding paper [1] for pure Bi, is used to predict numerical values for various transport coefficients at The various effective masses, relaxation times, and mobilities relative to the pseudosymmetry axes are tabulated. Expressions are derived for the figures of merit and anisotropy parameters for a variety of limiting cases. The numerical predictions are again in substantial accord with direct experimental measurements.

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