溶液处理壳聚糖基质子导体门控的低压铟锌氧化物薄膜晶体管

2011 IEEE International Conference of Electron Devices and Solid-State Circuits Pub Date : 2011-12-29 DOI:10.1109/EDSSC.2011.6117692

Xiao Han, Jie Jiang, Bin Zhou, Jia Sun, Wei Dou, Huixuan Liu, Qing Wan

{"title":"溶液处理壳聚糖基质子导体门控的低压铟锌氧化物薄膜晶体管","authors":"Xiao Han, Jie Jiang, Bin Zhou, Jia Sun, Wei Dou, Huixuan Liu, Qing Wan","doi":"10.1109/EDSSC.2011.6117692","DOIUrl":null,"url":null,"abstract":"We fabricated indium-zinc-oxide (IZO) thin film transistors (TFT) gated by chitosan (CS) on ITO/glass substrate. Chitosan is demonstrated to be a new kind of solution-processed organic polymer electrolyte, which has nice film-forming characteristic. The chitosan thin film shows a large specific gate capacitance of 8.06 (µF/cm2 due to the mobile-ions induced electric-double-layer effect. These devices exhibited a good performance with a small subthreshold swing of 0.3 V/dec, a large on-off current ratio of ∼106, a high field-effect mobility of 1.24 cm2V−1 s−1 and a low operate voltage of 2 V. The solution-processed chitosan-based TFTs may have many potential applications for large-area, mechanically flexible, lightweight, and inexpensive electronic logic circuits.","PeriodicalId":6363,"journal":{"name":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Low-voltage indium-zinc-oxide thin film transistors gated by solution-processed chitosan-based proton conductors\",\"authors\":\"Xiao Han, Jie Jiang, Bin Zhou, Jia Sun, Wei Dou, Huixuan Liu, Qing Wan\",\"doi\":\"10.1109/EDSSC.2011.6117692\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We fabricated indium-zinc-oxide (IZO) thin film transistors (TFT) gated by chitosan (CS) on ITO/glass substrate. Chitosan is demonstrated to be a new kind of solution-processed organic polymer electrolyte, which has nice film-forming characteristic. The chitosan thin film shows a large specific gate capacitance of 8.06 (µF/cm2 due to the mobile-ions induced electric-double-layer effect. These devices exhibited a good performance with a small subthreshold swing of 0.3 V/dec, a large on-off current ratio of ∼106, a high field-effect mobility of 1.24 cm2V−1 s−1 and a low operate voltage of 2 V. The solution-processed chitosan-based TFTs may have many potential applications for large-area, mechanically flexible, lightweight, and inexpensive electronic logic circuits.\",\"PeriodicalId\":6363,\"journal\":{\"name\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2011.6117692\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2011.6117692","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在ITO/玻璃衬底上制备了壳聚糖门控的氧化铟锌(IZO)薄膜晶体管。壳聚糖是一种新型的溶液法制备有机聚合物电解质，具有良好的成膜特性。由于移动离子诱导的双电层效应，壳聚糖薄膜具有8.06(µF/cm2)的比栅电容。这些器件表现出良好的性能，亚阈值摆幅小至0.3 V/dec，通断电流比大至~ 106，场效应迁移率高至1.24 cm2V−1 s−1，工作电压低至2V。溶液处理的壳聚糖基tft在大面积、机械柔性、轻量化和廉价的电子逻辑电路中有许多潜在的应用。

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Low-voltage indium-zinc-oxide thin film transistors gated by solution-processed chitosan-based proton conductors

We fabricated indium-zinc-oxide (IZO) thin film transistors (TFT) gated by chitosan (CS) on ITO/glass substrate. Chitosan is demonstrated to be a new kind of solution-processed organic polymer electrolyte, which has nice film-forming characteristic. The chitosan thin film shows a large specific gate capacitance of 8.06 (µF/cm2 due to the mobile-ions induced electric-double-layer effect. These devices exhibited a good performance with a small subthreshold swing of 0.3 V/dec, a large on-off current ratio of ∼106, a high field-effect mobility of 1.24 cm2V−1 s−1 and a low operate voltage of 2 V. The solution-processed chitosan-based TFTs may have many potential applications for large-area, mechanically flexible, lightweight, and inexpensive electronic logic circuits.

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2011 IEEE International Conference of Electron Devices and Solid-State Circuits

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