A. Syrbu, V. Yakovlev, G. Suruceanu, A. Mereutza, L. Mawst, A. Bhattacharya, M. Nesnidal, J. Lopez, D. Boetz
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ZnSe-facet-passivated InGaAs/InGaAsP/InGaP diode lasers of high cw power and "wallplug" efficiency
Summary form only given. We report on the cw performance of optimized facet-coated InGaAs/InGaAsP/InGaP (/spl lambda/=0.95 /spl mu/m) diode lasers as well as on the improvement in their performance as the facets are passivated by in-situ growth of ZnSe half-wave films. The results represent record-high values for both front-facet-emitted cw power: 2.9 W, as well as maximum cw wallplug efficiency: 54%.
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