双材料栅极梯度沟道和双氧化厚度圆柱栅极(DMG-GC-DOT) MOSFET漏极电流解析模型

Nanoscience & Nanotechnology-Asia Pub Date : 2019-06-25 DOI:10.2174/2210681208666180813122145

Hind Jaafar, A. Aouaj, A. Bouziane, B. Iñíguez

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引用次数: 0

摘要

提出了一种新型的双材料栅极梯度沟道和双氧化层厚度圆柱状栅极(DMG-GC-DOT) MOSFET。漏极电流的解析模型采用准二维泊松方程的圆柱形式，并以表面电位的函数表示，表面电位的计算采用电流密度表达式。分析结果与利用Silvaco Atlas -TCAD软件进行的三维数值模拟结果比较表明，从亚阈值到强反演区以及不同的偏置电压，分析结果具有较好的一致性。两种不同介电常数的氧化物厚度可以有效地提高DMG-GC-DOT MOSFET的亚阈值电流。

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An Analytical Drain Current Model for Dual-material Gate Graded - channel and Dual-oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET

A novel Dual Material Gate Graded Channel and Dual Oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET is presented in this paper. Analytical model of drain current is developed using a quasi-two-dimensional cylindrical form of the Poisson equation and is expressed as a function of the surface potential, which is calculated using the expressions of the current density. Comparison of the analytical results with 3D numerical simulations using Silvaco Atlas - TCAD software presents a good agreement from subthreshold to strong inversion regime and for different bias voltages. Two oxide thicknesses with different permittivity can effectively improve the subthreshold current of DMG-GC-DOT MOSFET.

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Nanoscience & Nanotechnology-Asia

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