电子泄漏对氮化镓基发光二极管效率下降的影响

2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2010-10-07 DOI:10.1109/NUSOD.2010.5595651

J. Piprek, Zhanming Li

{"title":"电子泄漏对氮化镓基发光二极管效率下降的影响","authors":"J. Piprek, Zhanming Li","doi":"10.1109/NUSOD.2010.5595651","DOIUrl":null,"url":null,"abstract":"Nitride-based light-emitting diodes suffer from a reduction (droop) of the internal quantum efficiency (IQE) with increasing injection current. Using advanced device simulation, we investigate the impact of electron leakage on the IQE droop for different properties of the electron blocker layer. We also find that the electron leakage decreases with increasing temperature, which contradicts common assumptions.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"4 1","pages":"89-90"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Electron leakage effects on the efficiency droop in GaN-based light-emitting diodes\",\"authors\":\"J. Piprek, Zhanming Li\",\"doi\":\"10.1109/NUSOD.2010.5595651\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Nitride-based light-emitting diodes suffer from a reduction (droop) of the internal quantum efficiency (IQE) with increasing injection current. Using advanced device simulation, we investigate the impact of electron leakage on the IQE droop for different properties of the electron blocker layer. We also find that the electron leakage decreases with increasing temperature, which contradicts common assumptions.\",\"PeriodicalId\":6780,\"journal\":{\"name\":\"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"volume\":\"4 1\",\"pages\":\"89-90\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2010.5595651\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2010.5595651","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

随着注入电流的增加，氮基发光二极管的内量子效率(IQE)降低(下降)。利用先进的器件模拟技术，我们研究了电子泄漏对不同性质的电子阻挡层IQE下垂的影响。我们还发现电子泄漏随温度的升高而减小，这与通常的假设相矛盾。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Electron leakage effects on the efficiency droop in GaN-based light-emitting diodes

Nitride-based light-emitting diodes suffer from a reduction (droop) of the internal quantum efficiency (IQE) with increasing injection current. Using advanced device simulation, we investigate the impact of electron leakage on the IQE droop for different properties of the electron blocker layer. We also find that the electron leakage decreases with increasing temperature, which contradicts common assumptions.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

自引率

0.00%

发文量