碳化硅(SiC):历史较短。SiC功率器件设计的一种分析方法

IF 0.1 0 THEATER

Teatro e Storia Pub Date : 2005-12-19 DOI:10.1109/SMICND.2005.1558796

G. Brezeanu

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引用次数: 14

摘要

在今年我们庆祝碳化硅发现一百周年之际，本文的第一部分介绍了半导体材料的简短历史。设计指南，基于简单的解析表达式，为高功率SiC肖特基势垒二极管(SBD)的理想结构，还包括

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Silicon carbide (SiC): a short history. an analytical approach for SiC power device design

As this year we celebrate a century since the discovery of Silicon Carbide, a short history of semiconductor material is presented in the first part of the paper. Design guidelines, based on simple analytical expressions, for ideal structures of high power SiC Schottky barrier diodes (SBD), are also included

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Teatro e Storia THEATER-

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