用瞬态测量技术表征非晶硅引脚太阳能电池

G. Schmid, M. Schubert, H. Brummack, N. Bernhard
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引用次数: 0

摘要

为了更具体地了解太阳能电池的局限性(以及生产线生产过程中的故障),作者报告了电压模式下空间电荷限制飞行时间(SCL-TOF)的研究,以及500 nm厚引脚结构的正偏置瞬态开关实验。补充了I-V特性和量子产率,这两种技术都易于使用,并提供了a- si:H基太阳能电池降解状态的清晰和可重复的测量。利用SCL-TOF的萃取时间可以推导出有效载流子寿命。与时间和温度相关的正向电流瞬态在双注入复合电流开始时显示出明显的电压阈值,这与器件的内置电压有关。由于光或电流诱导降解而增强的体复合减少了饱和正向电流,并增加了在针脚二极管中建立空间电荷最初所需的时间。还研究了前后侧光照对光吸收的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characterization of amorphous silicon pin solar cells by transient measurement techniques
In order to provide more specific access to solar cell limitations (and to faults during line production as well) the authors report on space-charge limited time-of-flight (SCL-TOF) studies in the voltage mode, and on forward bias transient switching experiments in 500 nm thick pin structures. Complementing I-V characteristics and quantum yield, both techniques are easy to use and give a clear and reproducible measure of the degradation state of a-Si:H based solar cells. An effective carrier lifetime can be deduced from the extraction time of SCL-TOF. Time and temperature dependent forward current transients show a distinct voltage threshold in the onset of double-injection recombination currents which is related to the built-in voltage of the devices. Enhanced bulk recombination due to light or current induced degradation reduces saturated forward currents and increases the time initially needed for building up space charge in the pin-diodes. Differences upon light-soaking by front or back side illumination have also been investigated.
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