{"title":"6H-SiC和4H-SiC空气退火钌肖特基触点电性能比较及失效分析","authors":"K. V. Munthali","doi":"10.1080/22243682.2018.1548303","DOIUrl":null,"url":null,"abstract":"Thin films of ruthenium (Ru) on 6-hexagonal silicon carbide (6H-SiC) and 4-hexagonal silicon carbide (4H-SiC) were analysed by Rutherford backscattering spectroscopy (RBS) at various annealing temp...","PeriodicalId":17291,"journal":{"name":"Journal of the Chinese Advanced Materials Society","volume":"6 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2018-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparative electrical performance and failure analysis of air-annealed ruthenium Schottky contacts on 6H-SiC and 4H-SiC\",\"authors\":\"K. V. Munthali\",\"doi\":\"10.1080/22243682.2018.1548303\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thin films of ruthenium (Ru) on 6-hexagonal silicon carbide (6H-SiC) and 4-hexagonal silicon carbide (4H-SiC) were analysed by Rutherford backscattering spectroscopy (RBS) at various annealing temp...\",\"PeriodicalId\":17291,\"journal\":{\"name\":\"Journal of the Chinese Advanced Materials Society\",\"volume\":\"6 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of the Chinese Advanced Materials Society\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1080/22243682.2018.1548303\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Chinese Advanced Materials Society","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/22243682.2018.1548303","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparative electrical performance and failure analysis of air-annealed ruthenium Schottky contacts on 6H-SiC and 4H-SiC
Thin films of ruthenium (Ru) on 6-hexagonal silicon carbide (6H-SiC) and 4-hexagonal silicon carbide (4H-SiC) were analysed by Rutherford backscattering spectroscopy (RBS) at various annealing temp...
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