基于28nm CMOS的23mW 24GS/s 6b时间交错混合两步ADC

Benwei Xu, Yuan Zhou, Y. Chiu
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引用次数: 16

摘要

我们提出了一种功率和面积效率高的24GS/s, 6b, 16路时间交错(TI) ADC阵列,具有用于高速和低功耗工作的电压时间(v/t)混合两步结构,无串扰SAR DAC拓扑和非分层采样前端,分别避免参考和输入缓冲器,以节省功率和面积。还报道了参考ADC通过抖动进行背景时偏校准。原型ADC阵列采用28nm CMOS制造,在24GS/s下功耗为23mW,低频输入的SNDR/SFDR分别为35/54dB, Nyquist输入的SNDR/SFDR为29/41dB。ADC的核心面积为0.03mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 23mW 24GS/s 6b Time-interleaved hybrid two-step ADC in 28nm CMOS
We present a power- and area-efficient 24GS/s, 6b, 16-way time-interleaved (TI) ADC array, featuring a voltage-time (v/t) hybrid two-step structure for high-speed and low-power operation, a crosstalk-free SAR DAC topology and a non-hierarchical sampling frontend obviating reference and input buffers, respectively, for power and area savings. Background timing-skew calibration via dithering a reference ADC is also reported. Fabricated in 28nm CMOS, the prototype ADC array consumes 23mW at 24GS/s and measures an SNDR/SFDR of 35/54dB for a low-frequency input and 29/41dB for a Nyquist input, respectively. The core area of the ADC is 0.03mm2.
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