Generation of trench dislocation in 0.25 /spl mu/m logic technology and its elimination

The generation of defect around trench corners has been investigated using delayering and Wright etching method in 0.25 /spl mu/m logic technology. Process variables impacting the generation of dislocations, including densification of HDP oxide and source/drain (S/D) anneal are studied. It was found that the dislocation density increased abruptly after S/D implantation and post-anneal. Almost all dislocations were detected at trench bottom corners, which correspond to the stress concentrated region. The fact that all etch-pits are discovered at nMOS area without exception implies that the generation of trench dislocations is correlated to the N+S/D implantation. The change of S/D anneal from rapid thermal anneal (RTA) to tube anneal followed by RTA can completely eliminate trench dislocations.