高效多晶硅太阳电池的最佳表面和本体钝化

H.E. Elgamel, A. Rohatgi, Z. Chen, C. Vinckier, J. Nijs, R. Mertens
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引用次数: 4

摘要

采用不同的钝化方案制备了传统(CC)和电磁铸造(EMC)多晶硅太阳电池。热干燥和PECVD SiO/sub 2/的薄层(/spl sim/100 /spl Aring/)用于为多晶硅太阳能电池提供氧化物表面钝化。发现生长薄层的热干氧化物可以有效地实现表面钝化。然而,对于薄的PECVD SiO/ sub2 /层,为了观察表面钝化效果,必须在沉积后进行低温(/spl sim/350/spl℃)形成气体退火。此外,氢等离子体钝化已经过优化,可实现原子氢在材料中的极深渗透(>30 /spl mu/m),从而非常有效地实现多晶硅太阳能电池的体钝化。通过将热干表面氧化钝化与前后氢等离子体处理相结合,在4 cm/sup 2/下实现了17%的效率(NREL独立证实为16.93%),而没有任何Al的吸入性。另一方面,使用PECVD SiO/sub 2/薄层获得的太阳能电池效率与使用热干SiO/sub 2/层制造的电池效率非常相似。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optimal surface and bulk passivation of high efficiency multicrystalline silicon solar cells
Conventional (CC) and electromagnetically cast (EMC) multicrystalline silicon solar cells are fabricated following different passivation schemes. Thin layers (/spl sim/100 /spl Aring/) of thermal dry and PECVD SiO/sub 2/ are implemented for providing oxide surface passivation for multicrystalline silicon solar cells. It is found that growing thin layers of thermal dry oxide results in efficient surface passivation. However, for thin PECVD SiO/sub 2/ layers it is necessary to perform, post deposition, low temperature (/spl sim/350/spl deg/C) forming gas anneal in order to observe the surface passivation effect. In addition, hydrogen plasma passivation has been optimized for achieving very deep penetration of atomic hydrogen in the material (>30 /spl mu/m) and as a consequence very effective bulk passivation of multicrystalline silicon solar cells. By combining the thermal dry surface oxide passivation with the hydrogen plasma treatment from the front and the back sides, efficiency of 17% on 4 cm/sup 2/ (independently confirmed by NREL as 16.93%) is realized without any Al gettering. On the other hand, the solar cell efficiencies obtained using thin layers of PECVD SiO/sub 2/ are found to be very comparable to the efficiency of the cells fabricated with thermal dry SiO/sub 2/ layers.
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