InP上in /sub -x/ Ga/sub - 1-x/As的高精度表征

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147424

J.P. Estrera, W. Duncan, Y. Kao, H. Liu

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引用次数: 0

摘要

介绍了分子束外延(MBE)在半绝缘InP:Fe基体上生长In/sub x/Ga/sub 1-x/As的傅立叶变换光致发光(FTPL)、x射线衍射(XRD)、微拉曼光谱(microraman)和光反射率(PR)无损表征结果。FTPL通过4.2 K和293 K PL发射的相关性确定了低温和室温下的重组过程和InGaAs薄膜的载流子类型。XRD测定了薄膜松弛的程度和成分。低温PL带隙能与XRD组成的相关性表明了InGaAs薄膜的应变性质。通过拉曼散射确定了类gaas的LO和TO模式以及类inas的LO模式。室温PR和PL带隙能在实验误差范围内具有相关性

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High precision characterization in In/sub x/Ga/sub 1-x/As on InP

Results of Fourier transform photoluminescence (FTPL), X-ray diffraction (XRD), micro-Raman spectroscopy, and photoreflectance (PR) nondestructive characterization measurements of In/sub x/Ga/sub 1-x/As grown by molecular beam epitaxy (MBE) on semi-insulating InP:Fe substates are presented. FTPL identified recombination processes at low and room temperature and carrier types of InGaAs films through correlation of 4.2 K and 293 K PL emissions. XRD measurements determine the extent of film relaxation and the composition. The strained nature of the InGaAs films is suggested by the correlation of low temperature PL bandgap energy and XRD composition. GaAs-like LO and TO modes and an InAs-like LO mode are identified by Raman scattering. Room temperature PR and PL bandgap energies show correlation within experimental error.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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