甲基硅氧烷基介电薄膜的残余应力行为

Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals Pub Date : 2001-10-01 DOI:10.1080/10587250108024768

W. Oh, T. Shin, M. Ree, M. Jin, K. Char

{"title":"甲基硅氧烷基介电薄膜的残余应力行为","authors":"W. Oh, T. Shin, M. Ree, M. Jin, K. Char","doi":"10.1080/10587250108024768","DOIUrl":null,"url":null,"abstract":"Abstract Residual stress of methylsilsequioxane film, which was spin-coated on silicon substrate and followed by soft-baking, was measured in-situ during curing and subsequent cooling with varying processing conditions. The thickness and refractive index of the cured films were measured using ellipsometry. Their structure was also examined by X-ray diffraction.","PeriodicalId":18940,"journal":{"name":"Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals","volume":"30 1","pages":"397 - 402"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Residual Stress Behavior in Methylsilsesquioxane-Based Dielectric Thin Films\",\"authors\":\"W. Oh, T. Shin, M. Ree, M. Jin, K. Char\",\"doi\":\"10.1080/10587250108024768\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract Residual stress of methylsilsequioxane film, which was spin-coated on silicon substrate and followed by soft-baking, was measured in-situ during curing and subsequent cooling with varying processing conditions. The thickness and refractive index of the cured films were measured using ellipsometry. Their structure was also examined by X-ray diffraction.\",\"PeriodicalId\":18940,\"journal\":{\"name\":\"Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals\",\"volume\":\"30 1\",\"pages\":\"397 - 402\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1080/10587250108024768\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/10587250108024768","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

摘要:对在硅衬底上自旋涂覆甲基硅氧烷薄膜进行软焙后，在不同工艺条件下固化和冷却过程中的残余应力进行了原位测量。利用椭偏仪测量了固化膜的厚度和折射率。用x射线衍射对其结构进行了分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Residual Stress Behavior in Methylsilsesquioxane-Based Dielectric Thin Films

Abstract Residual stress of methylsilsequioxane film, which was spin-coated on silicon substrate and followed by soft-baking, was measured in-situ during curing and subsequent cooling with varying processing conditions. The thickness and refractive index of the cured films were measured using ellipsometry. Their structure was also examined by X-ray diffraction.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals

自引率

0.00%

发文量