R. McPartland, D. Loeper, F. Higgins, Raj Singh, G. MacDonald, G. Komoriya, S. Aymeloglu, M. DePaolis, C. Leung
{"title":"SRAM嵌入式存储器,低成本,闪存eeprom开关控制冗余","authors":"R. McPartland, D. Loeper, F. Higgins, Raj Singh, G. MacDonald, G. Komoriya, S. Aymeloglu, M. DePaolis, C. Leung","doi":"10.1109/CICC.2000.852668","DOIUrl":null,"url":null,"abstract":"This paper describes the use of low cost, flash EEPROM switches to control redundancy in SRAM embedded memories. Flash cell design, operation and process technology are described. A 768K-bit embedded SRAM memory with flash controlled column redundancy and built in self-repair is presented.","PeriodicalId":20702,"journal":{"name":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","volume":"156 1","pages":"287-289"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"SRAM embedded memory with low cost, flash EEPROM-switch-controlled redundancy\",\"authors\":\"R. McPartland, D. Loeper, F. Higgins, Raj Singh, G. MacDonald, G. Komoriya, S. Aymeloglu, M. DePaolis, C. Leung\",\"doi\":\"10.1109/CICC.2000.852668\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the use of low cost, flash EEPROM switches to control redundancy in SRAM embedded memories. Flash cell design, operation and process technology are described. A 768K-bit embedded SRAM memory with flash controlled column redundancy and built in self-repair is presented.\",\"PeriodicalId\":20702,\"journal\":{\"name\":\"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)\",\"volume\":\"156 1\",\"pages\":\"287-289\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2000.852668\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2000.852668","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SRAM embedded memory with low cost, flash EEPROM-switch-controlled redundancy
This paper describes the use of low cost, flash EEPROM switches to control redundancy in SRAM embedded memories. Flash cell design, operation and process technology are described. A 768K-bit embedded SRAM memory with flash controlled column redundancy and built in self-repair is presented.