Characterization and Doping Effect of Cu-Doped ZnO Films

Cu (copper)-doped ZnO (zinc oxide) was synthesized using Cu(NO3)2·3H2O (copper (II) nitrate) and Zn(NO3)2·6H2O (zinc nitrate) by chemical co-precipitation method. The weight percentages of dopant in solution were Cu (2, 3, and 5 wt %). Cu-doped ZnO thin films were prepared on p-Si (100) substrate by screen printing method. Cu-doped ZnO/Si films were annealed at different temperatures from 300 to 700 °C. In this study, Cu-doped ZnO structures were prepared by a simple precipitation technique, and characterized by various techniques such as XRD (X-ray diffraction) and SEM (scanning electron microscope). The electrical properties of Cu-doped ZnO/Si were measured. It has found that Cu-doped ZnO/Si films can be used as optoelectronic devices.