接触孔结构中的合金高基电阻开关存储器

B. Kim, C. Mahata, Hojeong Ryu, M. Ismail, Byung‐Do Yang, Sungjun Kim
{"title":"接触孔结构中的合金高基电阻开关存储器","authors":"B. Kim, C. Mahata, Hojeong Ryu, M. Ismail, Byung‐Do Yang, Sungjun Kim","doi":"10.3390/COATINGS11040451","DOIUrl":null,"url":null,"abstract":"Resistive random-access memory (RRAM) devices are noticeable next generation memory devices. However, only few studies have been conducted regarding RRAM devices made of alloy. In this paper, we investigate the resistive switching behaviors of an Au/Ti/HfTiOx/p-Si memory device. The bipolar switching is characterized depending on compliance current under DC sweep mode. Good retention in the low-resistance state and high-resistance state is attained for nonvolatile memory and long-term memory in a synapse device. For practical switching operation, the pulse transient characteristics are studied for set and reset processes. Moreover, a synaptic weight change is achieved by a moderate pulse input for the potentiation and depression characteristics of the synaptic device. We reveal that the high-resistance state and low-resistance state are dominated by Schottky emissions.","PeriodicalId":22482,"journal":{"name":"THE Coatings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Alloyed High-k-Based Resistive Switching Memory in Contact Hole Structures\",\"authors\":\"B. Kim, C. Mahata, Hojeong Ryu, M. Ismail, Byung‐Do Yang, Sungjun Kim\",\"doi\":\"10.3390/COATINGS11040451\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Resistive random-access memory (RRAM) devices are noticeable next generation memory devices. However, only few studies have been conducted regarding RRAM devices made of alloy. In this paper, we investigate the resistive switching behaviors of an Au/Ti/HfTiOx/p-Si memory device. The bipolar switching is characterized depending on compliance current under DC sweep mode. Good retention in the low-resistance state and high-resistance state is attained for nonvolatile memory and long-term memory in a synapse device. For practical switching operation, the pulse transient characteristics are studied for set and reset processes. Moreover, a synaptic weight change is achieved by a moderate pulse input for the potentiation and depression characteristics of the synaptic device. We reveal that the high-resistance state and low-resistance state are dominated by Schottky emissions.\",\"PeriodicalId\":22482,\"journal\":{\"name\":\"THE Coatings\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-04-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"THE Coatings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3390/COATINGS11040451\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"THE Coatings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3390/COATINGS11040451","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

电阻式随机存取存储器(RRAM)是引人注目的下一代存储器。然而,关于合金材料的RRAM器件的研究很少。本文研究了Au/Ti/HfTiOx/p-Si存储器件的电阻开关行为。双极开关的特性取决于直流扫描模式下的顺应电流。对于突触装置中的非易失性记忆和长时记忆,在低电阻状态和高电阻状态下获得良好的保持。在实际的开关操作中,研究了设置和复位过程的脉冲瞬态特性。此外,通过为突触装置的增强和抑制特性提供适度的脉冲输入来实现突触重量的变化。我们发现高阻态和低阻态以肖特基辐射为主。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Alloyed High-k-Based Resistive Switching Memory in Contact Hole Structures
Resistive random-access memory (RRAM) devices are noticeable next generation memory devices. However, only few studies have been conducted regarding RRAM devices made of alloy. In this paper, we investigate the resistive switching behaviors of an Au/Ti/HfTiOx/p-Si memory device. The bipolar switching is characterized depending on compliance current under DC sweep mode. Good retention in the low-resistance state and high-resistance state is attained for nonvolatile memory and long-term memory in a synapse device. For practical switching operation, the pulse transient characteristics are studied for set and reset processes. Moreover, a synaptic weight change is achieved by a moderate pulse input for the potentiation and depression characteristics of the synaptic device. We reveal that the high-resistance state and low-resistance state are dominated by Schottky emissions.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信