11F-5高频压电PZT薄膜微机械超声换能器

Q.F. Zhou, D. Wu, F. Djuth, C.G. Liu, K. Shung
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引用次数: 1

摘要

本文介绍了压电厚膜MEMS高频超声换能器的最新进展。制备了复合PZT溶液,并将其沉积在镀铂硅片上,制备了活性铁电厚膜。为了提高PZT厚膜的电性能,系统地研究了PZT的粒径分布和粉末与溶液的质量比对复合溶液的影响。PZT薄膜沉积工艺的改进产生了高质量、无裂纹的PZT薄膜,厚度可达18微米。基于这些厚PZT薄膜的高频(>80 MHz)换能器已成功制成。测量结果表明,这些传感器比以往的PZT薄膜传感器具有更高的灵敏度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
11F-5 High-Frequency Piezoelectric PZT Film Micromachined Ultrasonic Transducers
This paper presents the latest development of MEMS high frequency ultrasound transducers with PZT piezoelectric thick films. Composite PZT solution was prepared and deposited on platinum-plated silicon wafers to fabricate active ferroelectrics thick-films. Particle size distribution (PSD) and powder of PZT-to-solution mass ratio effects of the composite solution were systematically studied to enhance electrical properties of PZT thick films. Improvements to the PZT film deposition process have yielded high quality, crack-free PZT films up to 18 mum in thickness. High-frequency (>80 MHz) transducers based on these thick PZT films have been successfully fabricated. The measured results show that these transducers possess much better sensitivity than previous PZT film transducers.
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