银纳米粒子局部表面等离子体共振增强对硅基光电探测器性能的改进

Yaobin Dong, Zih-Chun Su, Bo Chen, Yi-Long Chen, Du-Ting Cheng, Kun-Rong Lin, Ching-Fuh Lin
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引用次数: 0

摘要

金属纳米粒子的局部表面等离子体共振(LSPR)被广泛应用于提高光电探测器的性能,并得到了许多研究小组的研究。由于带隙的限制,硅基(Si-based)器件在红外区传感方面遇到了挑战。为了克服这一问题,本研究讨论了银(Ag) NPs如何在照明时通过诱导LSPR,通过快速热退火(RTA)工艺修饰si基肖特基光电探测器,并提高中红外(MIR)响应性。在3460 nm入射光源下,175℃退火器件的响应度从0.4481 mA/W提高到0.6872 mA/W,比未退火器件提高了1.533倍。此外,利用COMSOL软件进行电场强度模拟,证实了Ag NPs确实可以通过增强电场强度来提高感应LSPR。因此,在相同的测量条件下,在肖特基器件中,Ag纳米粒子可以增强和放大MIR的响应信号,从而实现在si基肖特基器件中检测MIR区域的能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improvement by localized surface plasmon resonance enhancement from Ag nanoparticles in Si-based photodetector
Localized surface plasmon resonance (LSPR) from metal nanoparticles (NPs) has been widely applied to enhance the performance of photodetectors and has been studied by many groups. Due to the limitation of the bandgap, silicon-based (Si-based) devices encounter challenges in sensing infrared region. To overcome this issue, this study discusses how the silver (Ag) NPs to modify Si-based Schottky photodetectors and enhance mid-infrared (MIR) responsivity via rapid thermal annealing (RTA) process by inducing LSPR when illuminating. Under an incident light source at 3460 nm wavelength, the responsivity of the device annealing at 175°C is increased from 0.4481 mA/W to 0.6872 mA/W, which is enhanced 1.533 times compared to device without annealing. In addition, using COMSOL software for electric field intensity simulation confirms that Ag NPs can indeed enhance the electric field intensity to increase the induced LSPR. Therefore, it is demonstrated that the response signal of MIR can be enhanced and amplified by Ag NPs in Schottky devices under the same measurement conditions, achieving the ability to detect MIR region in Si-based Schottky devices.
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