0.18µm CMOS超宽带LNA，采用新的反馈配置，优化低噪声，高增益和小面积

2009 12th International Symposium on Design and Diagnostics of Electronic Circuits & Systems Pub Date : 2009-04-15 DOI:10.1109/DDECS.2009.5012126

Y. C. Chang, H. Kao, C. Kao, Chih-Wei Yang, J. S. Fu, N. Karmakar, Li-Chun Chang

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引用次数: 1

摘要

本文提出了一种采用新型反馈连接方式的低噪声放大器。UWB LNA采用0.18µm TSMC CMOS技术设计，实现高增益、小尺寸和低噪声。LNA的平均功率增益为11 dB，噪声系数(NF)为2.87 dB，输入匹配度为−10.9 dB，回波损耗为−7 dB, IIP3为−3 dBm，尺寸仅为0.54 mm2，功耗为15 mW。

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0.18 µm CMOS UWB LNA with new feedback configuration for optimization low noise, high gain and small area

In this paper, we present the low noise amplifier using new feedback connection configurations. The UWB LNA is design in 0.18 µm TSMC CMOS technique to achieve high gain, small size and low noise. The LNA achieved 11 dB of average power gain, low 2.87 dB noise figure (NF), −10.9 dB input match, −7 dB return loss, −3 dBm of IIP3 and only 0.54 mm2 size with 15 mW power consumption.

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2009 12th International Symposium on Design and Diagnostics of Electronic Circuits & Systems

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