基于二次dickson包络检测器的物联网传感器节点应用分析

Pouyan Bassirian, J. Moody, S. Bowers
{"title":"基于二次dickson包络检测器的物联网传感器节点应用分析","authors":"Pouyan Bassirian, J. Moody, S. Bowers","doi":"10.1109/MWSYM.2017.8059077","DOIUrl":null,"url":null,"abstract":"This paper presents a study of passive Dickson based envelope detectors operating in the quadratic small signal regime, specifically intended to be used in RF front end of sensing units of IoE sensor nodes. Critical parameters such as open-circuit voltage sensitivity (OCVS), charge time, input impedance, and output noise are studied and simplified circuit models are proposed to predict the behavior of the detector, resulting in practical design intuitions. There is strong agreement between model predictions, simulation results and measurements of 15 representative test structures that were fabricated in a 130 nm RF CMOS process.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Analysis of quadratic dickson based envelope detectors for IoE sensor node applications\",\"authors\":\"Pouyan Bassirian, J. Moody, S. Bowers\",\"doi\":\"10.1109/MWSYM.2017.8059077\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a study of passive Dickson based envelope detectors operating in the quadratic small signal regime, specifically intended to be used in RF front end of sensing units of IoE sensor nodes. Critical parameters such as open-circuit voltage sensitivity (OCVS), charge time, input impedance, and output noise are studied and simplified circuit models are proposed to predict the behavior of the detector, resulting in practical design intuitions. There is strong agreement between model predictions, simulation results and measurements of 15 representative test structures that were fabricated in a 130 nm RF CMOS process.\",\"PeriodicalId\":6481,\"journal\":{\"name\":\"2017 IEEE MTT-S International Microwave Symposium (IMS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE MTT-S International Microwave Symposium (IMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2017.8059077\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE MTT-S International Microwave Symposium (IMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2017.8059077","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12

摘要

本文提出了一种基于被动Dickson的包络探测器的研究,该探测器在二次小信号状态下工作,专门用于物联网传感器节点的传感单元的射频前端。研究了开路电压灵敏度(OCVS)、充电时间、输入阻抗和输出噪声等关键参数,并提出了简化的电路模型来预测探测器的行为,从而使设计更加实用。模型预测、仿真结果和在130 nm RF CMOS工艺中制造的15个代表性测试结构的测量结果之间存在很强的一致性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis of quadratic dickson based envelope detectors for IoE sensor node applications
This paper presents a study of passive Dickson based envelope detectors operating in the quadratic small signal regime, specifically intended to be used in RF front end of sensing units of IoE sensor nodes. Critical parameters such as open-circuit voltage sensitivity (OCVS), charge time, input impedance, and output noise are studied and simplified circuit models are proposed to predict the behavior of the detector, resulting in practical design intuitions. There is strong agreement between model predictions, simulation results and measurements of 15 representative test structures that were fabricated in a 130 nm RF CMOS process.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信