GSMBE对[110]InP的1.55 μ m激光

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147444

F. Zamkotsian, F. Poingt, L. Le Gouezigou, F. Gaborit, J. Provost, C. Artigue, J. Benoit

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引用次数: 0

摘要

讨论了在[110]InP上气源分子束外延(GSMBE)生长的GaInAsP系统中标准异质结和多量子阱(MQW) 1.55 μ m激光器的实现。结果表明，在同一衬底上集成激光器和高效偏振调制器可以实现适合偏振置乱方案的高性能发射机。

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1.55 mu m laser on [110] InP by GSMBE

The realization of standard heterojunction and multiple quantum well (MQW) 1.55- mu m lasers in the GaInAsP system grown by gas source molecular beam epitaxy (GSMBE) on [110] InP is discussed. It is shown that high-performance transmitters suitable for the polarization scrambling scheme can be achieved by integrating, on the same substrate, lasers and efficient polarization modulators.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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