{"title":"开发用于RFIC应用的0.5 /spl mu/m BiCMOS器件模型库","authors":"Seong-Ho Park, G. Lim, Yong-Hee Lee","doi":"10.1109/ICVC.1999.820867","DOIUrl":null,"url":null,"abstract":"In this paper a 0.5 /spl mu/m BiCMOS device model library developed for RFIC applications has been introduced. The modeling methodology, the RF device characteristics available in this library, their equivalent circuit models with high-frequency parasitics, and modeling results have been described.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"28 1","pages":"178-181"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Development of 0.5 /spl mu/m BiCMOS device model library for RFIC applications\",\"authors\":\"Seong-Ho Park, G. Lim, Yong-Hee Lee\",\"doi\":\"10.1109/ICVC.1999.820867\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper a 0.5 /spl mu/m BiCMOS device model library developed for RFIC applications has been introduced. The modeling methodology, the RF device characteristics available in this library, their equivalent circuit models with high-frequency parasitics, and modeling results have been described.\",\"PeriodicalId\":13415,\"journal\":{\"name\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"volume\":\"28 1\",\"pages\":\"178-181\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICVC.1999.820867\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICVC.1999.820867","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Development of 0.5 /spl mu/m BiCMOS device model library for RFIC applications
In this paper a 0.5 /spl mu/m BiCMOS device model library developed for RFIC applications has been introduced. The modeling methodology, the RF device characteristics available in this library, their equivalent circuit models with high-frequency parasitics, and modeling results have been described.