一种新型高Q变宽差动串联堆叠螺旋电感

Sunilkumar Tumma, N. Rao
{"title":"一种新型高Q变宽差动串联堆叠螺旋电感","authors":"Sunilkumar Tumma, N. Rao","doi":"10.1109/ICCCNT.2017.8203906","DOIUrl":null,"url":null,"abstract":"In this paper a variable width Differential Series Stacked Spiral Inductor is proposed. The proposed inductor is implemented using multilayers by gradually decreasing metal width from top layer to bottom layer. The variation in metal width decreases the series resistance of the inductor that increases the Quality factor. The Increase in metal strip length increases the Inductance. The proposed inductor is designed and simulated by using High Frequency Structural Simulator (HFSS) for 0.18μm CMOS Technology. The simulation results have shown 35% improvement in inductance value and 30% improvement in Quality factor without changing the Self Resonant Frequency when compared with Standard Differential inductor of same on chip area.","PeriodicalId":6581,"journal":{"name":"2017 8th International Conference on Computing, Communication and Networking Technologies (ICCCNT)","volume":"2 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A novel high Q variable width differential series stacked spiral inductor\",\"authors\":\"Sunilkumar Tumma, N. Rao\",\"doi\":\"10.1109/ICCCNT.2017.8203906\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper a variable width Differential Series Stacked Spiral Inductor is proposed. The proposed inductor is implemented using multilayers by gradually decreasing metal width from top layer to bottom layer. The variation in metal width decreases the series resistance of the inductor that increases the Quality factor. The Increase in metal strip length increases the Inductance. The proposed inductor is designed and simulated by using High Frequency Structural Simulator (HFSS) for 0.18μm CMOS Technology. The simulation results have shown 35% improvement in inductance value and 30% improvement in Quality factor without changing the Self Resonant Frequency when compared with Standard Differential inductor of same on chip area.\",\"PeriodicalId\":6581,\"journal\":{\"name\":\"2017 8th International Conference on Computing, Communication and Networking Technologies (ICCCNT)\",\"volume\":\"2 1\",\"pages\":\"1-5\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-07-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 8th International Conference on Computing, Communication and Networking Technologies (ICCCNT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCCNT.2017.8203906\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 8th International Conference on Computing, Communication and Networking Technologies (ICCCNT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCCNT.2017.8203906","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文提出了一种变宽差动串联堆叠螺旋电感。该电感器采用多层结构,从顶层到底层逐渐减小金属宽度。金属宽度的变化减小了电感的串联电阻,从而增加了质量因数。金属条长度的增加增加了电感。利用0.18μm CMOS技术的高频结构模拟器(HFSS)对该电感进行了设计和仿真。仿真结果表明,与片上面积相同的标准差动电感相比,在不改变自谐振频率的情况下,电感值提高35%,品质因数提高30%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A novel high Q variable width differential series stacked spiral inductor
In this paper a variable width Differential Series Stacked Spiral Inductor is proposed. The proposed inductor is implemented using multilayers by gradually decreasing metal width from top layer to bottom layer. The variation in metal width decreases the series resistance of the inductor that increases the Quality factor. The Increase in metal strip length increases the Inductance. The proposed inductor is designed and simulated by using High Frequency Structural Simulator (HFSS) for 0.18μm CMOS Technology. The simulation results have shown 35% improvement in inductance value and 30% improvement in Quality factor without changing the Self Resonant Frequency when compared with Standard Differential inductor of same on chip area.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信