石墨烯和其他二维材料的合成:化学气相沉积的过去和未来

S. Pei, Q. Yu, K. P. Huang, S. Xing, S. Chang, R. Ebrahim, F. Mansurov
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引用次数: 0

摘要

在过去的七年中,化学气相沉积已经成为在金属和其他衬底上合成石墨烯薄膜的首选技术。已经推出了带有石墨烯触摸屏的商用手机,并展示了卷对卷生产工具。通过等离子体增强工艺,沉积温度也从>1000°C降低到~400°C。对于器件应用,单晶石墨烯在预定位置的种子生长技术已经被开发出来,以避免晶界的有害影响。目前正在研究化学气相沉积和种子生长在过渡金属二硫化物中的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis of graphene and other 2D material: The past and future of chemical vapor deposition
Over the past seven years, chemical vapor deposition has emerged as the preferred technique for the synthesis of graphene films on metal as well as other substrates. Commercial cell phones with a graphene touch screen have been introduced and roll-to-roll production tools have been demonstrated. The deposition temperature is also reduced from >1000°C to ~400°C with a plasma-enhanced process. For device applications, a seeded growth of single-crystal graphene at predetermined location technique has been developed to avoid the detrimental effects of the grain boundaries. The application of chemical vapor deposition and seeded growth to transition metal dichalcogenides is now under investigation.
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