原子种植法用三价阳离子在框架位上的同形取代改性丝光沸石酸性

Peng Wu , Takayuki Komatsu , Tatsuaki Yashima , Shin-ichi Nakata , Hiroshi Shouji
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引用次数: 5

摘要

铝、镓和锑阳离子被纳入高硅丝光沸石的框架中,通过“原子种植法”和相应的金属氯化物蒸气在高温下改变Bronsted酸位的酸强度。通过红外光谱(IR)、核磁共振光谱(MAS NMR)和催化反应证实了金属阳离子的加入。金属阳离子在丝光沸石骨架中最大掺入的最佳温度为873 K。由于Si(OH)Ga基团的酸性桥接,四面体Ga阳离子在3620cm−1处表现出IR波段,在71Ga MAS NMR谱中表现出159 ppm的特征波段。由于桥接Si(OH)Sb基团,在3663 cm−1处观察到红外波段。Si的酸强度(OH)我(我= Al, Ga和某人)组红外频率估计,吸附吡啶的红外光谱和活动对甲苯歧化和烷基化枯烯丙胺是Si (OH)的顺序Al>如果(OH) Ga>比;如果某人(哦)。最弱的酸位Si(OH)Sb对甲苯歧化反应不活跃,但对异丙烯烷基化反应有显著活性,具有较高的对选择性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modification of mordenite acidity by isomorphous substitution of trivalent cations in the framework sites using the atom-planting method

Aluminum, gallium and antimony cations were incorporated into the framework of highly siliceous mordenite to modify the acid strength of Bronsted acid sites by the ‘atom-planting method’ with the corresponding metal chloride vapors at elevated temperatures. The framework incorporation of metal cations was confirmed by IR, MAS NMR and catalytic reactions. The optimum temperature to achieve a maximum incorporation of metal cations into the mordenite framework was demonstrated to be 873 K. Tetrahedral Ga cations exhibited an IR band owing to acidic bridging Si(OH)Ga groups at 3620cm−1 and a characteristic band at 159 ppm in the 71Ga MAS NMR spectrum. The IR band owing to bridging Si(OH)Sb groups was observed at 3663 cm−1. The acid strength of Si(OH)Me (Me = Al, Ga and Sb) groups estimated from their IR frequency, IR spectra of adsorbed pyridine and the activity for toluene disproportionation and cumene alkylation with 2-propanol was in the order Si(OH)Al>Si(OH)Ga> > Si(OH)Sb. The weakest acid sites, Si(OH)Sb, inactive for the toluene disproportionation, showed a significant activity for the cumene alkylation with higher para-selectivity.

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