基于线性口袋轮廓的纳米n-MOSFET断极电压模型

2016 2nd International Conference on Electrical, Computer & Telecommunication Engineering (ICECTE) Pub Date : 2016-12-01 DOI:10.1109/ICECTE.2016.7879624

Prof. Dr. Engr. Muhibul Haque Bhuyan, Q. Khosru

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引用次数: 1

摘要

基于器件栅极下源极和漏极的对称线性口袋轮廓，建立了一种用于植入纳米n- mosfet的解析型管断电压模型。采用直线近似方程模拟了MOS器件表面沿栅长方向的微袋轮廓。推导出整个栅极长度的有效掺杂浓度，并将其纳入由表面强反转电荷表达式得到的掐断电压模型中。然后，模拟了各种漏极和栅极偏置以及各种器件参数下的引脚关断电压。为了观察模型的有效性，通过合并该截断电压模型，绘制了各种栅极偏置的漏极电流与漏极电压曲线。仿真结果表明，所建立的截断电压模型可用于研究和表征口袋植入的先进ULSI器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Linear pocket profile based pinch-off voltage model for nano scale n-MOSFET

This paper focuses on developing an analytical pinch-off voltage model for the pocket implanted nano scale n-MOSFETs based on symmetric linear pocket profiles both at the source and drain sides under the gate of the device. Straight line approximated equation is used to simulate the pocket profiles along the gate length at the surface of the MOS device. The effective doping concentration is derived for the whole gate length and is incorporated in the pinch-off voltage model that is obtained from the strong inversion charge expression at the surface. Then the pinch-off voltage is simulated for various drain and gate biases as well as for various device parameters. To observe the model validity, drain current vs. drain voltage curve is plotted for various gate biases by incorporating this pinch-off voltage model. The simulation results approve that the developed pinch-off voltage model can be used to study and characterize the pocket implanted advanced ULSI devices.

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2016 2nd International Conference on Electrical, Computer & Telecommunication Engineering (ICECTE)

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