n-InP的近理想肖特基接触

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147431

Z. Shi, W. Anderson

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引用次数: 0

摘要

通过无氧化表面清洗技术，在n-InP表面实现了接近理想的肖特基接触。研究了金属半导体(MS)二极管在100 ~ 300 K温度范围内的电流电压(I-V)和电容电压(C-V)特性。目前的输运机制主要是热离子发射(TE)理论，而不是热离子场发射(TFE)理论。理想因子n在150 ~ 300 K的温度范围内几乎是恒定的。二极管的优异性能，如理想的电特性，约1.01的n值，线性1/C/sup 2/-V图，归因于保持表面完整性和减少界面状态。

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Nearly ideal Schottky contacts of n-InP

Nearly ideal Schottky contacts were realized on n-InP by oxide-free surface cleaning techniques. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the metal-semiconductor (MS) diodes are presented for the temperature range of 100 to 300 K. The current transport mechanism is found to be dominated by thermionic emission (TE) rather than thermionic field emission (TFE) theory. The ideality factor, n, is nearly constant in the temperature range of 150 to 300 K. The superior behavior of the diodes, such as ideal electrical characteristics, n values of around 1.01, and linear 1/C/sup 2/-V plots, is attributed to the preservation of the surface integrity and the reduction of the interface states.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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