用于智能计算的铁电器件

IF 2.2 Q3 COMPUTER SCIENCE, CYBERNETICS
G. Han, Yue Peng, Huan Liu, Jiuren Zhou, Zhengdong Luo, Bing Chen, R. Cheng, C. Jin, W. Xiao, Fenning Liu, Jiayi Zhao, Shulong Wang, Xiao Yu, Y. Liu, Yue Hao
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引用次数: 4

摘要

近年来,晶体管的缩放正接近其物理极限,阻碍了计算能力的进一步发展。在后摩尔时代,新兴的逻辑和存储设备已经成为扩展智能计算能力的基础硬件。本文综述了智能计算用铁电器件的最新研究进展。阐述了铁电器件的材料特性和电学特性,讨论了可用于智能计算的新型铁电材料和器件。本文对用于低功耗逻辑、高性能存储器和神经形态应用的铁电电容器、晶体管和隧道结器件进行了全面的回顾和比较。此外,为了对高性能铁电智能计算系统的发展提供有用的指导,讨论了实现用于高效计算的超尺度铁电器件的关键挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ferroelectric Devices for Intelligent Computing
Recently, transistor scaling is approaching its physical limit, hindering the further development of the computing capability. In the post-Moore era, emerging logic and storage devices have been the fundamental hardware for expanding the capability of intelligent computing. In this article, the recent progress of ferroelectric devices for intelligent computing is reviewed. The material properties and electrical characteristics of ferroelectric devices are elucidated, followed by a discussion of novel ferroelectric materials and devices that can be used for intelligent computing. Ferroelectric capacitors, transistors, and tunneling junction devices used for low-power logic, high-performance memory, and neuromorphic applications are comprehensively reviewed and compared. In addition, to provide useful guidance for developing high-performance ferroelectric-based intelligent computing systems, the key challenges for realizing ultrascaled ferroelectric devices for high-efficiency computing are discussed.
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来源期刊
CiteScore
6.80
自引率
4.70%
发文量
26
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