UVCVD、DECR PECVD和13.56 MHz PECVD对InP/绝缘子界面性能的比较

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147434

N. Proust, M. Petitjean, S. Cassette, A. Huber, C. Grattepain, F. Plais, B. Agius, J. Perrin

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引用次数: 0

摘要

用紫外化学气相沉积(UVCVD)、分布电子回旋共振(DECR)等离子体增强化学气相沉积(PECVD)和脉冲13.56 MHz PECVD在250℃下在InP上沉积SiNH和SiOH。从界面组成(XPS)、InP缺陷产生(ETOCAPS)和金属-绝缘体-硅二极管的二次离子质谱(SIMS)谱图等方面比较了两种沉积技术。

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InP/insulator interface properties: a comparison between UVCVD, DECR PECVD and 13.56 MHz PECVD

SiNH and SiOH have been deposited on InP by ultraviolet chemical vapor deposition (UVCVD), distributed electronic cyclotronic resonance (DECR) plasma-enhanced chemical vapor deposition (PECVD), and pulsed 13.56 MHz PECVD at 250 degrees C. A comparison between deposition techniques is presented in terms of interface composition (XPS), defect creation in InP (ETOCAPS), and secondary ion mass spectrometry (SIMS) profiles on metal-insulator-silicon diodes.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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