表面键合对氮化铟纳米半导体热物理性能的影响

International Conference on Advanced Nanomaterials & Emerging Engineering Technologies Pub Date : 2013-07-24 DOI:10.1109/ICANMEET.2013.6609350

B. D. Diwan, S. Murugan

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引用次数: 0

摘要

本文用简单模型方法分析了原子对大小和原子对数目对氮化铟纳米粒子的归一化单原子对结合能和熔化温度的影响。结果表明，InN纳米粒子的单原子对结合能和熔化温度与粒径成反比的二次函数关系。随着粒径的增大，每原子对的结合能和熔化温度逐渐接近其体积值，当粒径大于100 nm时，熔化温度与体积值基本一致。

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Role of surface bonding in thermo physical properties of Indium nitride nano-semiconductor

In this paper we have analyzed the effect of size and number of atom-pairs in normalized per atom pair binding (cohesive) energy and melting temperature of the Indium nitride ( InN ) nano-particle using simple model approach. It is observed that the per-atom-pair binding (cohesive) energy and melting temperature are a quadratic function of the inverse of the particle size for InN nano-particle. The per atom-pair binding (cohesive) energy and melting temperature comes near that of their bulk value with increasing the particle size and same as the bulk material when the particle size is above than 100 nm.

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International Conference on Advanced Nanomaterials & Emerging Engineering Technologies

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