纳米III-V级发光二极管表面复合控制

2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI:10.1109/IPCON.2017.8115993

S. Fortuna, C. Heidelberger, Nicolas M. Andrade, E. Yablonovitch, Ming C. Wu

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引用次数: 1

摘要

我们证明了使用牺牲Al2O3层的InP/InGaAs纳米级发光二极管的低表面复合速度(~ 8700 cm/s)和非辐射寿命的降低。我们预测在适度提高自发发射率后，光学天线的高效率操作。

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Controlling surface recombination in a nanoscale III-V light emitting diode

We demonstrate low surface recombination velocity (∼8700 cm/s) and reduction of non-radiative lifetime in an InP/InGaAs nanoscale light emitting diode using a sacrificial Al2O3 layer. We predict high efficiency operation after modest enhancement of spontaneous emission rate with an optical antenna.

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2017 IEEE Photonics Conference (IPC) Part II

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