Hongshuai Zhang, Hong Zhang, Yan Song, Ruizhi Zhang
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引用次数: 8
摘要
本文提出了一种低功耗、面积高效的10位混合电容-MOS SAR ADC,该ADC由7位MSB电容DAC (CDAC)和3位LSB MOS DAC组成,比纯CDAC功耗更低,芯片面积更小。3位LSB MOS DAC不是使用一串8个MOS晶体管来控制一个单位电容器,而是使用一串4个原生MOS晶体管来控制2个单位电容器,从而使每个单位MOS具有更高的压降和更可靠的工作。与基于vcm的10位纯CDAC相比,所提出的CAP-MOS DAC的总能耗降低了56.2%。在200-kS/s转换速率下,原型10位SAR ADC采用0.18 μm CMOS技术实现,在0.6 v电源下,在99-kHz输入时的SNDR/ SFDR为56.91 dB/68.56 dB,在200 kS/s时的FoM为15.38 fJ/步长,功耗为1.76 μW。峰值DNL和INL分别为+0.27/ - 0.21 LSB和+0.43/ - 0.45 LSB。ADC占用0.097 mm2的小有效面积。
A 10-bit 200-kS/s 1.76-μW SAR ADC with Hybrid CAP-MOS DAC for Energy-Limited Applications
This paper presents a low-power and area efficient 10-bit SAR ADC with hybrid capacitive-MOS consisting of a 7-bit MSB capacitive DAC (CDAC) and a 3-bit LSB MOS DAC, which consumes less power and much smaller chip area than a pure CDAC. Instead of using a string of 8 MOS transistors to control one unit capacitor, the 3-bit LSB MOS DAC is realized by a MOS string with 4 native MOS transistors to control 2 unit capacitors, which allows higher voltage drop and more reliable operation for each unit MOS. The overall energy consumption of the proposed CAP-MOS DAC is reduced by 56.2% compared with a Vcm-based 10-bit pure CDAC. Under a 200-kS/s conversion rate, the prototype 10-bit SAR ADC is implemented in a 0.18-μm CMOS technology, showing an SNDR/ SFDR of 56.91 dB/68.56 dB at 99-kHz input under a 0.6-V power-supply, while consuming 1.76 μW at 200 kS/s for a FoM of 15.38 fJ/step. The peak DNL and INL are +0.27/−0.21 LSB and +0.43/−0.45 LSB, respectively. The ADC occupies a small active area of 0.097 mm2.