{"title":"半导体、硅和锗中Shuffle螺位错的性质","authors":"Huili Zhang, Chun Zhang, C. Zeng, Lumei Tong","doi":"10.2174/1874088X01509010010","DOIUrl":null,"url":null,"abstract":"The width, Peierls barrier and stress for shuffle screw dislocation in Si and Ge have been calculated by the improved P-N theory. The calculated widths are about 0.6b, b is the Burgers vector. The Peierls barriers for shuffle screw dislocations in Si and Ge are respectively about 3.61~4.61meV/A and 5.31~13.32meV/A, Peierls stresses are 1.40~2.07 meV/A 3 and 1.93~3.29 meV/A 3 . Our calculated results may correspond to the metastable core of the shuffle screw dislocation which is centred on the bond between two atoms.","PeriodicalId":22791,"journal":{"name":"The Open Materials Science Journal","volume":"111 1","pages":"10-13"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The Properties of Shuffle Screw Dislocations in Semiconductors Siliconand Germanium\",\"authors\":\"Huili Zhang, Chun Zhang, C. Zeng, Lumei Tong\",\"doi\":\"10.2174/1874088X01509010010\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The width, Peierls barrier and stress for shuffle screw dislocation in Si and Ge have been calculated by the improved P-N theory. The calculated widths are about 0.6b, b is the Burgers vector. The Peierls barriers for shuffle screw dislocations in Si and Ge are respectively about 3.61~4.61meV/A and 5.31~13.32meV/A, Peierls stresses are 1.40~2.07 meV/A 3 and 1.93~3.29 meV/A 3 . Our calculated results may correspond to the metastable core of the shuffle screw dislocation which is centred on the bond between two atoms.\",\"PeriodicalId\":22791,\"journal\":{\"name\":\"The Open Materials Science Journal\",\"volume\":\"111 1\",\"pages\":\"10-13\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Open Materials Science Journal\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.2174/1874088X01509010010\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Open Materials Science Journal","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2174/1874088X01509010010","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Properties of Shuffle Screw Dislocations in Semiconductors Siliconand Germanium
The width, Peierls barrier and stress for shuffle screw dislocation in Si and Ge have been calculated by the improved P-N theory. The calculated widths are about 0.6b, b is the Burgers vector. The Peierls barriers for shuffle screw dislocations in Si and Ge are respectively about 3.61~4.61meV/A and 5.31~13.32meV/A, Peierls stresses are 1.40~2.07 meV/A 3 and 1.93~3.29 meV/A 3 . Our calculated results may correspond to the metastable core of the shuffle screw dislocation which is centred on the bond between two atoms.
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