{"title":"CdTe:Ge在1.06和1.32 μm处的光折射率","authors":"K. Shcherbin, S. Oaouiov, P. Poplavko","doi":"10.1364/cleo_europe.1998.cthh54","DOIUrl":null,"url":null,"abstract":"CdTe is studied intensively as promising material for the real time holographic recording in the near infrared because it ensures the largest gain factor as compared to the other photorefractive semiconductors. In this report we present the results of characterisation of photorefractive germanium doped CdTe crystals grown in different Ukrainian laboratories and compere the results with that known for vanadium doped CdTe [1].","PeriodicalId":10610,"journal":{"name":"Conference on Lasers and Electro-Optics Europe","volume":"10 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"1998-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photorefractivity of CdTe:Ge at 1.06 and 1.32 μm\",\"authors\":\"K. Shcherbin, S. Oaouiov, P. Poplavko\",\"doi\":\"10.1364/cleo_europe.1998.cthh54\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"CdTe is studied intensively as promising material for the real time holographic recording in the near infrared because it ensures the largest gain factor as compared to the other photorefractive semiconductors. In this report we present the results of characterisation of photorefractive germanium doped CdTe crystals grown in different Ukrainian laboratories and compere the results with that known for vanadium doped CdTe [1].\",\"PeriodicalId\":10610,\"journal\":{\"name\":\"Conference on Lasers and Electro-Optics Europe\",\"volume\":\"10 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference on Lasers and Electro-Optics Europe\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/cleo_europe.1998.cthh54\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference on Lasers and Electro-Optics Europe","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/cleo_europe.1998.cthh54","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
CdTe is studied intensively as promising material for the real time holographic recording in the near infrared because it ensures the largest gain factor as compared to the other photorefractive semiconductors. In this report we present the results of characterisation of photorefractive germanium doped CdTe crystals grown in different Ukrainian laboratories and compere the results with that known for vanadium doped CdTe [1].
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