{"title":"多晶硅缺陷的光谱电致发光照相鉴别","authors":"T. Fuyuki, A. Tani, Sinichiro Tsujii, E. Sugimura","doi":"10.1109/PVSC.2010.5614381","DOIUrl":null,"url":null,"abstract":"By using spectroscopic EL imaging technique, the intrinsic defects and the extrinsic deficiencies can be distinguished clearly at a glance. The intrinsic defects with deep traps induce infra-red emission depending on the electronic trap level. By comparing the filtered images, extrinsic defects which may cause serious effect on long term reliability can be detected photographically.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"43 1","pages":"001380-001382"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Photographic distinction of defects in polycrystalline Si by spectroscopic electroluminescence\",\"authors\":\"T. Fuyuki, A. Tani, Sinichiro Tsujii, E. Sugimura\",\"doi\":\"10.1109/PVSC.2010.5614381\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By using spectroscopic EL imaging technique, the intrinsic defects and the extrinsic deficiencies can be distinguished clearly at a glance. The intrinsic defects with deep traps induce infra-red emission depending on the electronic trap level. By comparing the filtered images, extrinsic defects which may cause serious effect on long term reliability can be detected photographically.\",\"PeriodicalId\":6424,\"journal\":{\"name\":\"2010 35th IEEE Photovoltaic Specialists Conference\",\"volume\":\"43 1\",\"pages\":\"001380-001382\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 35th IEEE Photovoltaic Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2010.5614381\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 35th IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2010.5614381","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photographic distinction of defects in polycrystalline Si by spectroscopic electroluminescence
By using spectroscopic EL imaging technique, the intrinsic defects and the extrinsic deficiencies can be distinguished clearly at a glance. The intrinsic defects with deep traps induce infra-red emission depending on the electronic trap level. By comparing the filtered images, extrinsic defects which may cause serious effect on long term reliability can be detected photographically.
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