S. Dissanayake, P. Chow, S. Lim, M. Wilkins, Eduard Dumitresc, Wenjie Yang, Q. Hudspeth, J. Krich, Jim S. Williams, J. Warrender, Meng-ju Sher
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Evaluating carrier lifetimes in laser hyperdoped silicon using terahertz spectroscopy
Silicon doped with gold at supersaturated concentrations is promising for infrared photodetectors and photovoltaic applications. Ion implantation followed by pulsed laser processing creates high quality hyperdoped material and we investigate material properties using terahertz spectroscopy.
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