等离子体电路与硅集成电路合并的可行性

M. Fukuda, Y. Tonooka, Y. Ishikawa
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引用次数: 1

摘要

利用纳米等离子体波导传输等离子体信号是提高硅集成电路信息传输能力的一种新技术。在传播过程中,表面等离子激元(SPPs)表现出光波的特性,其传输损耗主要由电子的集体振荡决定。利用spp的光波方面,信息可以通过等离子体信号传输,光传输电路和网络可以建立在微/纳米尺度上。这个尺寸尺度与由金属氧化物半导体场效应晶体管(mosfet)组成的电子电路的尺寸尺度密切相关。本文在已有的等离子体元件的基础上,讨论并确认了片上互连和其他电路的可行性。本文研究的第一个示例是波分复用电路,包括多路复用器和解路复用器(在1310和1550 nm波长波段),并根据每个组件的实验结果进行讨论。多路复用信号在多路复用器中被引导到单模波导中,在多路复用器中被分割,然后传递到电子电路中。发射的等离子体信号在栅极上蚀刻的狭缝处转换为电信号,从而驱动不带光电探测器的MOSFET,将MOSFET放大的信号输出到电子电路中。第二个例子是通过等离子体电路的相干信号传输。信号传输采用微/纳米等离子体电路,传输方式与光纤传输系统类似。这些通过等离子体信号传输的相干信号被实验证实,并在MOSFET栅极上刻蚀的狭缝处被检测并转换为电信号,然后从狭缝处输出。这些实验实例证实了等离子体电路与mosfet集成的可行性。在等离子体电路中,与电信号和光波信号相比,信号的传输损耗通常较高。在此,数值上再次证实了在面积不超过几百平方微米的等离子体电路中,等离子体信号的传输损耗低于电信号在电路中传输的损耗。光波信号(例如,在硅波导中传输)的损耗比等离子体信号的损耗低得多。然而,当波导宽度接近截止波长时,损耗迅速增加,大于等离子体信号的损耗。这项工作表明等离子体电路在纳米级电路中具有优势。本文提出的电路目前对于实际的硅集成电路应用来说过于原始,但足以表明将等离子体电路与硅集成电路合并的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Feasibility of Plasmonic Circuits Merged with Silicon Integrated Circuits
Plasmonic signal transmission via nanoscale plasmonic waveguides is a new technique with the potential to increase the information transfer capacity in silicon integrated circuits (ICs). During propagation, surface plasmon polaritons (SPPs) exhibit characteristics of a lightwave whose transmission loss is mainly determined by the collective oscillation of electrons. Using this lightwave aspect of SPPs, information can be transmitted using plasmonic signals and optical transmission circuits and networks can be built at the micro/nanoscale. This size scale correlates well with that of electronic circuits comprising metal-oxide-semiconductor field-effect transistors (MOSFETs). In this article, the feasibility of on-chip interconnects and other circuits were discussed and confirmed on the basis of previously developed plasmonic components. The first example examined herein was a wavelength-division-multiplexing circuit comprising a multiplexer and demultiplexer (in 1310 and 1550 nm-wavelength bands), discussed based on the experimental results for each component. Multiplexed signals at the multiplexer were guided into a single-mode waveguide, divided at the demultiplexer and then passed to the electronic circuits. The transmitted plasmonic signals were converted to electric signals at the slits etched on the gate electrode, thereby driving the MOSFET without photodetectors, whereupon the MOSFET-amplified signals were outputted to the electronic circuits. The second example was coherent signal transmission via plasmonic circuits. The signal transmission was performed using micro/nanoscale plasmonic circuits in a manner similar to those of optical fiber transmission systems. These coherent signal transmissions via plasmonic signals were experimentally confirmed, being detected and converted to electric signals at the slits etched on the gate electrode of the MOSFET and then outputted therefrom. These experimental examples confirmed the feasibility of plasmonic circuits integrated with MOSFETs. In plasmonic circuits, signal transmission loss is generally high compared to that of electric and lightwave signals. Herein, it was numerically confirmed again that the plasmonic signal transmission losses were lower than those of electric signals transmitted in electric circuits for plasmonic circuits not exceeding an area of a few hundred square micrometers. The loss of lightwave signals (e.g., transmitted in silicon waveguides) was much lower than those of plasmonic signals. However, as the waveguide width approached the cut-off wavelength, the loss quickly increased to be greater than that of plasmonic signals. This work indicates that plasmonic circuits have an advantage in nanoscale circuits. The circuits presented herein are currently too primitive for actual silicon IC applications, but are adequate to indicate the feasibility of merging plasmonic circuits with silicon ICs.
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